People

Dr. Asif ALI

About

Dr. Ali obtained his B.S degree in electronics from Comsats University Islamabad, Pakistan. He got his master's degree in Electronic Engineering from Myongji University, South Korea in 2017. In 2022, he obtained his PhD degree in Nanotechnology and Advanced Material Engineering at Sejong University , South Korea. He joined School of EEE at NTU as a research fellow since then.

Selected Publications

• Asif Ali, Haider Abbas et al. (2022). Versatile GeS-based CBRAM with compliance-current-controlled threshold and bipolar resistive switching for electronic synapses. Applied Materials Today, 29, 101554. Online

• Asif Ali, et al. Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses. Nano Res. 15, 2263–2277 (2022). Online

  

Dr. JU Xin

About

Dr. JU xin obtained his B.S degree from Tianjin University, China, then he got his M.S. degree from Peking University. He obtained his PhD degree from Nanyang Technological Univerisy, Singapore in Oct 2021 and joined as a research fellow at NTU and A*STAR since then.

Selected Publications

• X. Ju, D. S. Ang and C. Gu, "Impact of Channel Hot-Hole Stressing on Gate-Oxide Trap’s Emission," in IEEE Transactions on Electron Devices, vol. 67, no. 11, pp. 4720-4727, Nov. 2020. Online

• H. Zhang, X. Ju, K. S. Yew, and D. S. Ang, “Implementation of simple but powerful Trilayer oxide-based artificial synapses with a tailored bio-synapse-like structure,” ACS Applied Materials & Interfaces, 12(1), pp.1036-1045. Online

Mr. Elliot SEOW

About

Mr. Elliot Seow obtained his B.Eng degree from National Universtiy of Singapore, in 2023. He is now a PhD student at Nanyang Technological University, Singapore.

Mr. LI Jiayi

About

Mr. Li Jiayi obtained his B.Eng degree from Tongji University, China in 2021. He is now a PhD student at Nanyang Technological University, Singapore.

Selected Publications

• Li Jiayi, et al. Hyperpolarizing photoreceptor inspired biomimetic energy-saving sensor for dynamic machine vision. Nano Research (2024). online

• Li, Jiayi, et al. Emerging Memristive Artificial Neuron and Synapse Devices for the Neuromorphic Electronics Era. Nanoscale Horizons (2023). online

• Abbas, Haider, Jiayi Li, Asif Ali, Sajjad Hussain, Jongwan Jung, and Diing Shenp Ang. "Emulation of short-term and long-term synaptic plasticity with high uniformity in chalcogenide-based diffusive memristor device for neuromorphic applications." Journal of Materials Science & Technology (2024).online

Mr. LIAO Jia Hui

About

Mr. Liao Jia Hui obtained his B.Eng degree from NTU in 2023. He is now a PhD student at Nanyang Technological University, Singapore.

Mr. JI Bolin

About

Mr. Ji Bolin obtained his B.Eng degree from Xidian University, China in 2024. He is now a MSc. student (Electronics) at Nanyang Technological University, Singapore.

Mr. HE Zhiyuan

About

Mr. He Zhiyuan obtained his B.Eng degree from Huazhong University of Science and Technology, China in 2024. He is now a MSc. student (Electronics) at Nanyang Technological University, Singapore.

Mr. ZHANG Chen

About

Mr. Zhang CHen obtained his B.Eng degree from Beihang University, China in 2024. He is now a MSc. student (Electronics) at Nanyang Technological University, Singapore.

Dr. Haider ABBAS

About

Dr. Abbas obtained his B.S degree in electronic engnieering from Sir Syed University of Engineering and Technology, Pakistan. He got his PhD degree Myongji University, South Korea in 2019 and worked as a research fellow at Nano Electronic Devices & Materials Lab (NEDML) at Hanyang University since 2019. He joined School of EEE at Nanyang Technological University as a research fellow in Janurary, 2022. Now Dr. Abbas works as Assistant Professor at Sejong University, Korea.

Dr. Pranav Sairam Kalaga

PhD, degree conferred in 2021. Now working at Micron as NTI SENIOR ENGINEER.

Research Topic

Negative photoconductivity of soft-breakdown wide bandgap oxides

Mr. Shreyan Mondal

MEng, degree conferred in 2021. Now working at Temasek Laboratories as Research Associate.

Research Topic

Plasmonic sensors based on the negative photoconductivity effect in soft electrical breakdown wide bandgap oxides

Dr. Toh Rui Tze

PhD, degree conferred in 2019. Now working at GlobalFoundries as RF Technology Development & Device Engineer

Research Topic

RF power amplifier enablement and integration on thin-film high resistivity SOI

Dr. Tung Zhi Yan

PhD, degree conferred in 2019. Now woking at GLOBALFOUNDRIES as Principal Engineer (OPC Technology).

Research Topic

Bias temperature instability study on switching defects in SiON and high-κ gate dielectrics

Dr. Zhang Haizhong

PhD, degree conferred in 2017. Now working at Fuzhou University.

Research Topic

A study on complementary resistive switching characteristics in resistive random access memory for-next generation non-volatile memory technology

Dr. Zhou Yu

PhD, degree conferred in 2017

Research Topic

Characterization of nanoscale conducting filament in high-κ oxides by scanning tunneling microscopy and conductive atomic force microscopy

Dr. Tham Wai Hoe

PhD, degree conferred in 2016. Now working at GLOBALFOUNDRIES as MTS Integration and Yield Product Engineer.

Research Topic

Fabrication and characterization of AlGaN/GaN high electron mobility transistors on silicon

Dr. Duan Tianli

PhD, degree conferred in 2015. Now working in Southern University of Science and Technology, China.

Research Topic

High-κ metal gate for advanced transistor applications

Dr. Teo Zhi Qiang

PhD, degree conferred in 2015. Now working as Senior Engineer at Micron Technology.

Research Topic

Characterization of dynamic NBTI by ultra-fast charge pumping and ultra-fast switching methods

Dr. Gu Chenjie

PhD, degree conferred in 2015. Now woking as an Asscociate Professor at Ningbo university, China.

Research Topic

Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability

Dr. Boo Ann Ann

PhD, degree conferred in 2014. Now working as Principle Engineer at GLOBALFOUNDRIES.

Research Topic

On the “switching defects” in the SiON and high-κ gate dielectrics subjected to bias-temperature stressing

Dr. Yew Kwang Sing

PhD, degree conferred in 2014. Now working as senior Engineer at GLOBALFOUNDRIES.

Research Topic

Nanoscale characterization of advanced high-κ gate dielectric stacks via scanning tunneling microscopy

Dr. Gao Yuan

PhD, degree conferred in 2014. Now working at Intel Semiconductor (Dalian).

Research Topic

Dynamic bias-temperature instability study in metal gate/high-κ dielectric stacks.

Dr. Ho Jun Jie, Terence

PhD, degree conferred in 2014. Now working as Product Engineer at ams AG.

Research Topic

An in-depth investigation of the negative-bias temperature instability of p-MOSFETs

Dr. Du Guoan

PhD, degree conferred in 2013. Now working as Section Manager at United Microelectronics Corporation (UMC).

Research Topic

Electrical characterization of bias temperature instability in MOSFETs with the ultrathin SiON and La-doped HfSiO gate dielectrics

Dr. Hu Youzhou

PhD, degree conferred in 2013

Research Topic

Improved electrical characterization of negative-bias temperature instability

Mr. Lai Chung Sing, Simon

MEng, degree conferred in 2011

Research Topic

Electrical characterization of decoupled-plasma-nitrided MOSFETs under negative-bias temperature instability (NBTI)

Mr. Ong Yi Ching

PhD, degree conferred in 2009. Now woking as Technical Manager at TSMC, Hsingchu.

Research Topic

Analysis of high dielectric-constant gate stack reliability for nanoscale CMOS devices application via scanning tunneling microscopy

Phua Wee Hong, Timothy (NUS)

PhD, degree conferred in 2009
Co-supervised with Prof. C. H. Ling of ECE NUS. Now working as Senior Manager at NXP semiconductors.

Research Topic

Hot-carrier mechanisms in advanced NMOS transistors

Wang Shuang

PhD, degree conferred in 2009

Research Topic

Characterization of negative-bias temperature instability of the ultra-thin oxynitride gate P-MOSFET

Mr. Zhang Yu

MEng, degree conferred in 2008

Research Topic

The impact of channel engineering on hot-electron injection in the deep submicrometer flash memory cell

Mr. Chan Yeen Tat

MEng, degree conferred in 2005
Co-supervised with A/Prof. Goh Wang Ling, Division of Circuits and Systems

Research Topic

Process and device characterization of advanced SOI devices

Mr. Huang Jinsheng (NUS)

MEng, degree conferred in 2005. Now working as director at Vishay Intertechnology, United States.
Co-supervised with Prof. C. H. Ling of ECE NUS

Research Topic

Stress-induced leakage current in dual-gate CMOSFETs with ultra-thin nitrided gate oxides

Dr. Liao Hong (NUS)

PhD, degree conferred in 2005. Now working as Director at United Microelectronics Corporation (UMC).
Co-supervised with Prof. C. H. Ling of ECE NUS

Research Topic

Characterization of hot-carrier reliability in deep submicron MOSFETs

Mr. Xia Jinghua (NUS)

MEng, degree conferred in 2002. Now working as Reliability Engineer at Chartered Semiconductor Manufacturing.
Co-supervised with Prof. C. H. Ling of ECE NUS

Research Topic

Current-voltage hysteresis characterization of deep-submicron MOS devices

Dr. Lun Zhao (NUS)

PhD, degree conferred in 2002
Co-supervised with Prof. C. H. Ling of ECE NUS

Research Topic

Electrical characterization of bulk traps and interface traps in the fully depleted SOI MOSFET