Nanyang Technological University | School of Electrical and Electronic Engineering

Neuromorphic Device Lab

We develop semiconductor memory and sensing devices for energy-efficient computing, bio-inspired vision, and reliability-aware electronics.

Neuromorphic memory Retinomorphic vision Device reliability
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Lab Mission

The Neuromorphic Device Lab at Nanyang Technological University develops semiconductor memory and sensing devices for energy-efficient computing, bio-inspired vision, and reliability-aware electronics. We connect materials, device physics, circuit-relevant characterization, and neuromorphic system concepts.

Research Themes

Neuromorphic Memory Devices

RRAM, CBRAM, and transistor-based devices that emulate synaptic and neuronal functions for compact, low-power computing hardware.

Retinomorphic Vision Sensors

Bio-inspired optoelectronic devices and sensor concepts for dynamic machine vision, in-sensor preprocessing, and visual memory.

Device Reliability Physics

Trap dynamics, high-k gate dielectrics, nanoscale variability, and reliability mechanisms in advanced semiconductor devices.

Selected Recent Publications

  • Jiayi Li, Yuxi Guo, Xin Ju, and Diing Shenp Ang. Hyperpolarizing photoreceptor inspired biomimetic energy-saving sensor for dynamic machine vision. Nano Research. 2025. 10.26599/NR.2025.94907057
  • Asif Ali, Haider Abbas, Jiayi Li, Jongwan Jung, and Diing Shenp Ang. Ag/Ti/GeS/Ag bidirectional conductive-bridge selector with low turn-off latency, high endurance and enhanced switching uniformity. ACS Applied Electronic Materials. 2024. 10.1021/acsaelm.4c01392
  • Li, Jiayi, Haider Abbas, Diing Shenp Ang, Asif Ali, and Xin Ju. Emerging memristive artificial neuron and synapse devices for the neuromorphic electronics era. Nanoscale Horizons. 2023. 10.1039/D3NH00180F

Join The Lab

We welcome motivated PhD, M.Eng, MSc, and undergraduate researchers interested in semiconductor devices for memory, sensing, and neuromorphic computing. See Join Us for current topics, funding routes, and application guidance.

Principal Investigator

Prof. ANG Diing Shenp

Prof. Ang obtained both his B. Eng. (Hons) and Ph.D. degrees in electrical engineering from the National University of Singapore. He joined the School of Electrical and Electronic Engineering, NTU in July 2002 and was promoted to associate professor in April 2008.

Prof. Ang’s research interests lie mainly in neuromorphic RRAM devices, device reliability physics, and characterization.

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