Principal Investigator
Prof. Ang’s research interests include neuromorphic RRAM devices, device reliability physics, and semiconductor device characterization. His group develops memory and sensing devices for energy-efficient neuromorphic and retinomorphic systems.
Research Staff
Dr. Ali obtained his B.S degree in electronics from Comsats University Islamabad, Pakistan. He got his master's degree in Electronic Engineering from Myongji University, South Korea in 2017. In 2022, he obtained his PhD degree in Nanotechnology and Advanced Material Engineering at Sejong University , South Korea. He joined School of EEE at NTU as a research fellow since then.
Asif Ali, Haider Abbas et al. (2022). Versatile GeS-based CBRAM with compliance-current-controlled threshold and bipolar resistive switching for electronic synapses. Applied Materials Today, 29, 101554. Online
Asif Ali, et al. Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses. Nano Res. 15, 2263–2277 (2022). Online
Dr. JU xin obtained his B.S degree from Tianjin University, China, then he got his M.S. degree from Peking University. He obtained his PhD degree from Nanyang Technological University, Singapore in Oct 2021 and joined as a research fellow at NTU and A*STAR since then.
X. Ju, D. S. Ang and C. Gu, "Impact of Channel Hot-Hole Stressing on Gate-Oxide Trap’s Emission," in IEEE Transactions on Electron Devices, vol. 67, no. 11, pp. 4720-4727, Nov. 2020. Online
H. Zhang, X. Ju, K. S. Yew, and D. S. Ang, “Implementation of simple but powerful Trilayer oxide-based artificial synapses with a tailored bio-synapse-like structure,” ACS Applied Materials & Interfaces, 12(1), pp.1036-1045. Online
Dr. Zhang Fan obtained his B.Eng degree from Xidian University, China in 2018. He completed his Ph.D. at Xidian University in 2024, during which he also participated in a joint training program at the Institute of Microelectronics, Chinese Academy of Sciences. He joined School of EEE at NTU as a research fellow since then.
F. Zhang et al., “Unique Consecutive RTN Characteristics Coupled With Ferroelectric Nanodomain Switching in Advanced Fe-FinFETs,” IEEE Electron Device Lett., vol. 45, no. 4, pp. 566–569, Apr. 2024. Online
F. Zhang et al., “Evolution of the Interfacial Layer and Its Impact on Electric-Field-Cycling Behaviors in Ferroelectric Hf1–xZrxO2,” ACS Appl. Mater. Interfaces, vol. 14, no. 8, pp. 11028–11037, Mar. 2022. Online
Graduate Research Student
Mr. Elliot Seow obtained his B.Eng degree from National University of Singapore in 2023. He is now a PhD student at Nanyang Technological University, Singapore.
Mr. Liao Jia Hui obtained his B.Eng degree from NTU in 2023. He is now a PhD student at Nanyang Technological University, Singapore.
Mr. Jin Tian commenced his PhD study at Nanyang Technological University, Singapore in Aug 2025.
Undergraduate Intern
Alumni
Dr. Li Jiayi obtained his B.Eng degree from Tongji University, China in 2021 and his PhD degree from Nanyang Technological University, Singapore. He now works in Micron TD as Senior Cell Engineer.
Li Jiayi, et al. Hyperpolarizing photoreceptor inspired biomimetic energy-saving sensor for dynamic machine vision. Nano Research (2024). online
Li, Jiayi, et al. Emerging Memristive Artificial Neuron and Synapse Devices for the Neuromorphic Electronics Era. Nanoscale Horizons (2023). online
Abbas, Haider, Jiayi Li, Asif Ali, Sajjad Hussain, Jongwan Jung, and Diing Shenp Ang. "Emulation of short-term and long-term synaptic plasticity with high uniformity in chalcogenide-based diffusive memristor device for neuromorphic applications." Journal of Materials Science & Technology (2024).online
Mr. He Zhiyuan obtained his B.Eng degree from Huazhong University of Science and Technology, China in 2024 and his MSc degree from Nanyang Technological University, Singapore. He now works in COMAC (中国商飞).
Mr. Ji Bolin obtained his B.Eng degree from Xidian University, China in 2024 and his MSc degree from Nanyang Technological University, Singapore. He is now studying as a PhD student at NTU EEE.
Mr. Zhang Chen obtained his B.Eng degree from Beihang University, China in 2024 and his MSc degree from Nanyang Technological University, Singapore.
Dr. Abbas obtained his B.S degree in electronic engnieering from Sir Syed University of Engineering and Technology, Pakistan. He got his PhD degree Myongji University, South Korea in 2019 and worked as a research fellow at Nano Electronic Devices & Materials Lab (NEDML) at Hanyang University since 2019. He joined School of EEE at Nanyang Technological University as a research fellow in January 2022. Now Dr. Abbas works as Assistant Professor at Sejong University, Korea.
PhD, degree conferred in 2021. Now working at Micron as NTI SENIOR ENGINEER.
Negative photoconductivity of soft-breakdown wide bandgap oxides
MEng, degree conferred in 2021. Now working at Temasek Laboratories as Research Associate.
Plasmonic sensors based on the negative photoconductivity effect in soft electrical breakdown wide bandgap oxides
PhD, degree conferred in 2019. Now working at GlobalFoundries as RF Technology Development & Device Engineer
RF power amplifier enablement and integration on thin-film high resistivity SOI
PhD, degree conferred in 2019. Now working at GLOBALFOUNDRIES as Principal Engineer (OPC Technology).
Bias temperature instability study on switching defects in SiON and high-κ gate dielectrics
PhD, degree conferred in 2017. Now working at Fuzhou University.
A study on complementary resistive switching characteristics in resistive random access memory for-next generation non-volatile memory technology
PhD, degree conferred in 2017
Characterization of nanoscale conducting filament in high-κ oxides by scanning tunneling microscopy and conductive atomic force microscopy
PhD, degree conferred in 2016. Now working at GLOBALFOUNDRIES as MTS Integration and Yield Product Engineer.
Fabrication and characterization of AlGaN/GaN high electron mobility transistors on silicon
PhD, degree conferred in 2015. Now working in Southern University of Science and Technology, China.
High-κ metal gate for advanced transistor applications
PhD, degree conferred in 2015. Now working as Senior Engineer at Micron Technology.
Characterization of dynamic NBTI by ultra-fast charge pumping and ultra-fast switching methods
PhD, degree conferred in 2015. Now working as an Associate Professor at Ningbo University, China.
Atomistic simulation study of high-κ oxide defects for understanding gate stack and RRAM reliability
PhD, degree conferred in 2014. Now working as Principal Engineer at GLOBALFOUNDRIES.
On the “switching defects” in the SiON and high-κ gate dielectrics subjected to bias-temperature stressing
PhD, degree conferred in 2014. Now working as senior Engineer at GLOBALFOUNDRIES.
Nanoscale characterization of advanced high-κ gate dielectric stacks via scanning tunneling microscopy
PhD, degree conferred in 2014. Now working at Intel Semiconductor (Dalian).
Dynamic bias-temperature instability study in metal gate/high-κ dielectric stacks.
PhD, degree conferred in 2014. Now working as Product Engineer at ams AG.
An in-depth investigation of the negative-bias temperature instability of p-MOSFETs
PhD, degree conferred in 2013. Now working as Section Manager at United Microelectronics Corporation (UMC).
Electrical characterization of bias temperature instability in MOSFETs with the ultrathin SiON and La-doped HfSiO gate dielectrics
PhD, degree conferred in 2013
Improved electrical characterization of negative-bias temperature instability
MEng, degree conferred in 2011
Electrical characterization of decoupled-plasma-nitrided MOSFETs under negative-bias temperature instability (NBTI)
PhD, degree conferred in 2009. Now working as Technical Manager at TSMC, Hsinchu.
Analysis of high dielectric-constant gate stack reliability for nanoscale CMOS devices application via scanning tunneling microscopy
PhD, degree conferred in 2009
Co-supervised with Prof. C. H. Ling of ECE NUS. Now working as Senior Manager at NXP semiconductors.
Hot-carrier mechanisms in advanced NMOS transistors
PhD, degree conferred in 2009. Now working as F10 PIE Director at Micron
Characterization of negative-bias temperature instability of the ultra-thin oxynitride gate P-MOSFET
MEng, degree conferred in 2008
The impact of channel engineering on hot-electron injection in the deep submicrometer flash memory cell
MEng, degree conferred in 2005
Co-supervised with A/Prof. Goh Wang Ling, Division of Circuits and Systems
Process and device characterization of advanced SOI devices
MEng, degree conferred in 2005. Now working as director at Vishay Intertechnology, United States.
Co-supervised with Prof. C. H. Ling of ECE NUS
Stress-induced leakage current in dual-gate CMOSFETs with ultra-thin nitrided gate oxides
PhD, degree conferred in 2005. Now working as Director at United Microelectronics Corporation (UMC).
Co-supervised with Prof. C. H. Ling of ECE NUS
Characterization of hot-carrier reliability in deep submicron MOSFETs
MEng, degree conferred in 2002. Now working as Reliability Engineer at Chartered Semiconductor Manufacturing.
Co-supervised with Prof. C. H. Ling of ECE NUS
Current-voltage hysteresis characterization of deep-submicron MOS devices
PhD, degree conferred in 2002
Co-supervised with Prof. C. H. Ling of ECE NUS
Electrical characterization of bulk traps and interface traps in the fully depleted SOI MOSFET